Complete guide to semiconductor devices

By: Ng, Kwok KMaterial type: TextTextPublication details: New York : McGraw-Hill, ©1995Description: xxii, 677 p. : illustrationsISBN: 0070358605 ; 9780070358607Subject(s): Semiconductors -- Handbooks, manuals, etc | Semiconductors -- History | Semiconductors | Halbleiterbauelement | SemiconductorsDDC classification: 621.38152
Contents:
Part 1 Diodes I - rectifiers: p-n junction diode; p-i-n diode; Schottky-barrier diode; planar-doped-barrier diode; isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode; transferred-electron device (TED); impact-ionization avalanche transit-time (IMPATT); barrier-injection transit-time (BARITT) diode; resonant-tunnelling diode; real-space-transfer (RST) diode. Part 3 Resistive devices: resistor; Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor; charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS); planar-doped barrier switch; amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices; physical phenomena. (Part contents).
Summary: A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices.
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Included Index

Part 1 Diodes I - rectifiers: p-n junction diode; p-i-n diode; Schottky-barrier diode; planar-doped-barrier diode; isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode; transferred-electron device (TED); impact-ionization avalanche transit-time (IMPATT); barrier-injection transit-time (BARITT) diode; resonant-tunnelling diode; real-space-transfer (RST) diode. Part 3 Resistive devices: resistor; Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor; charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS); planar-doped barrier switch; amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices; physical phenomena. (Part contents).

A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices.

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